2N7002F  NXP

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - FETs, MOSFETs - Single
ManufacturerNexperia USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C475mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.69nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
FET Feature-
Power Dissipation (Max)830mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3