2SA1162GR  TOSHIBA

Product AttributesDescription
CategoriesDiscrete Semiconductor Products
ManufacturerToshiba Semiconductor and Storage , Transistors - Bipolar (BJT) - Single
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max150mW
Frequency - Transition80MHz
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini
Base Part Number2SA1162