2SC2712GR  TOSHIBA

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - Bipolar (BJT) - SingleToshiba Semiconductor and Storage
Manufacturer-
SeriesNPN
Transistor Type150mA
Current - Collector (Ic) (Max)50V
Voltage - Collector Emitter Breakdown (Max)250mV @ 10mA, 100mA
Vce Saturation (Max) @ Ib, Ic100nA (ICBO)
Current - Collector Cutoff (Max)70 @ 2mA, 6V
DC Current Gain (hFE) (Min) @ Ic, Vce150mW
Power - Max80MHz
Frequency - Transition125°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeTO-236-3, SC-59, SOT-23-3
Package / CaseS-Mini
Supplier Device Package2SC2712