BFG135  NXP

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - Bipolar (BJT) - RF
Manufacturer
SeriesNXP USA Inc.
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)NPN
Frequency - Transition15V
Noise Figure (dB Typ @ f)7GHz
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce1W
Current - Collector (Ic) (Max)80 @ 100mA, 10V
Operating Temperature150mA
Mounting Type175°C (TJ)
Package / CaseSurface Mount
Supplier Device PackageTO-261-4, TO-261AA
Base Part NumberSOT-223