BFG135  NXP

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - Bipolar (BJT) - RF
ManufacturerNXP USA Inc.
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 10V
Current - Collector (Ic) (Max)150mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223
Base Part NumberBFG135