BLF278  NXP

Product Category:RF MOSFET Transistors
Manufacturer:NXP
Transistor Polarity:N-Channel
Id - Continuous Drain Current:18 A
Vds - Drain-Source Breakdown Voltage:125 V
Rds On - Drain-Source Resistance:300 mOhms
Technology:Si
Gain:16 dB
Output Power:250 W
Maximum Operating Temperature:+ 150 C
Mounting Style:SMD/SMT
Package / Case:SOT-262 A1
Packaging:Tube
Brand:NXP Semiconductors
Channel Mode:Enhancement
Configuration:Dual
Fall Time:10 ns
Height:5.77 mm
Length:21.98 mm
Minimum Operating Temperature:- 65 C
Operating Frequency:225 MHz
Pd - Power Dissipation:500 W
Rise Time:25 ns
Factory Pack Quantity:20
Type:RF Power MOSFET
Vgs - Gate-Source Voltage:+/- 20 V
Vgs th - Gate-Source Threshold Voltage:4.5 V
Width:10.29 mm
Part # Aliases:BLF278,112