MMBTH10LT1G  ON-SEMI

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - Bipolar (BJT) - RFON Semiconductor
Manufacturer-
SeriesNPN
Transistor Type25V
Voltage - Collector Emitter Breakdown (Max)650MHz
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain225mW
Power - Max60 @ 4mA, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-55°C ~ 150°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeTO-236-3, SC-59, SOT-23-3
Package / CaseSOT-23-3 (TO-236)
Supplier Device PackageMMBTH10