NTD5867NLT4G  ON-SEMI

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleON Semiconductor
Manufacturer-
SeriesN-Channel
FET TypeMOSFET (Metal Oxide)
Technology60V
Drain to Source Voltage (Vdss)20A (Tc)
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)39 mOhm @ 10A, 10V
Rds On (Max) @ Id, Vgs2.5V @ 250µA
Vgs(th) (Max) @ Id15nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)675pF @ 25V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature36W (Tc)
Power Dissipation (Max)-55°C ~ 150°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeDPAK
Supplier Device PackageTO-252-3, DPak (2 Leads + Tab), SC-63