PDTA114YT  NXP

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerNexperia USA Inc.
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
Base Part NumberPDTA114