PDTA114YT  NXP

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-BiasedNexperia USA Inc.
Manufacturer-
SeriesPNP - Pre-Biased
Transistor Type100mA
Current - Collector (Ic) (Max)50V
Voltage - Collector Emitter Breakdown (Max)10 kOhms
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)100 @ 5mA, 5V
DC Current Gain (hFE) (Min) @ Ic, Vce100mV @ 250µA, 5mA
Vce Saturation (Max) @ Ib, Ic100nA (ICBO)
Current - Collector Cutoff (Max)250mW
Power - MaxSurface Mount
Mounting TypeTO-236-3, SC-59, SOT-23-3
Package / CaseTO-236AB
Supplier Device PackagePDTA114