PDTC123JE  NXP

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-BiasedNXP USA Inc.
Manufacturer-
SeriesNPN - Pre-Biased
Transistor Type100mA
Current - Collector (Ic) (Max)50V
Voltage - Collector Emitter Breakdown (Max)2.2 kOhms
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)100 @ 10mA, 5V
DC Current Gain (hFE) (Min) @ Ic, Vce100mV @ 250µA, 5mA
Vce Saturation (Max) @ Ib, Ic1µA
Current - Collector Cutoff (Max)150mW
Power - MaxSurface Mount
Mounting TypeSC-75, SOT-416
Package / CaseSC-75
Supplier Device PackagePDTC123