RD15HVF1  Mitsubishi

EU RoHS CompliantYes
Case ConnectionSOURCE
ConfigurationSINGLE
Drain Current-Max (Abs) (ID)4.0 A
Drain Current-Max (ID)4.0 A
DS Breakdown Voltage-Min30.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandULTRA HIGH FREQUENCY BAND
JESD-30 CodeR-PSFM-T3
JESD-609 Codee4
Number of Elements1.0
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150.0 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)48.0 W
Qualification StatusNot Qualified
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishSILVER
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON