RD70HHF1-101  Mitsubishi

Mfr Package DescriptionROHS COMPLIANT PACKAGE-2
EU RoHS CompliantYes
Case ConnectionSOURCE
ConfigurationSINGLE
Drain Current-Max (Abs) (ID)20.0 A
Drain Current-Max (ID)20.0 A
DS Breakdown Voltage-Min50.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandHIGH FREQUENCY BAND
JESD-30 CodeR-CDFM-F2
Number of Elements1.0
Number of Terminals2
Operating ModeDEPLETION MODE
Operating Temperature-Max175.0 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)150.0 W
Qualification StatusNot Qualified
Sub CategoryFET General Purpose Power
Surface MountYES
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON