RD70HVF1  Mitsubishi

Case ConnectionSOURCE
ConfigurationSINGLE
Drain Current-Max (Abs) (ID)20.0 A
Drain Current-Max (ID)20.0 A
DS Breakdown Voltage-Min30.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandULTRA HIGH FREQUENCY BAND
JESD-30 CodeR-CDFM-F2
Number of Elements1.0
Number of Terminals2
Operating ModeENHANCEMENT MODE
Operating Temperature-Max175.0 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)150.0 W
Qualification StatusNot Qualified
Sub CategoryFET General Purpose Power
Surface MountYES
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON