SI2319DS-T1-GE3  VISHAY

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 20V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3