SI2319DS-T1-GE3  VISHAY

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CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleVishay Siliconix
ManufacturerTrenchFET®
SeriesP-Channel
FET TypeMOSFET (Metal Oxide)
Technology40V
Drain to Source Voltage (Vdss)2.3A (Ta)
Current - Continuous Drain (Id) @ 25°C10V
Drive Voltage (Max Rds On, Min Rds On)82 mOhm @ 3A, 10V
Rds On (Max) @ Id, Vgs3V @ 250µA
Vgs(th) (Max) @ Id17nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)470pF @ 20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature750mW (Ta)
Power Dissipation (Max)-55°C ~ 150°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeTO-236-3, SC-59, SOT-23-3