SI2369DS-T1-GE3  VISHAY

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CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleVishay Siliconix
ManufacturerTrenchFET®
SeriesP-Channel
FET TypeMOSFET (Metal Oxide)
Technology30V
Drain to Source Voltage (Vdss)7.6A (Tc)
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)29 mOhm @ 5.4A, 10V
Rds On (Max) @ Id, Vgs2.5V @ 250µA
Vgs(th) (Max) @ Id36nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)1295pF @ 15V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature1.25W (Ta), 2.5W (Tc)
Power Dissipation (Max)-55°C ~ 150°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeTO-236
Supplier Device PackageTO-236-3, SC-59, SOT-23-3