SI3456DDV-T1-GE3  VISHAY

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CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleVishay Siliconix
ManufacturerTrenchFET®
SeriesN-Channel
FET TypeMOSFET (Metal Oxide)
Technology30V
Drain to Source Voltage (Vdss)6.3A (Tc)
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)40 mOhm @ 5A, 10V
Rds On (Max) @ Id, Vgs3V @ 250µA
Vgs(th) (Max) @ Id9nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)325pF @ 15V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature1.7W (Ta), 2.7W (Tc)
Power Dissipation (Max)-55°C ~ 150°C (TJ)
Operating TemperatureSurface Mount
Mounting Type6-TSOP
Supplier Device PackageSOT-23-6 Thin, TSOT-23-6