SUD50N03-11-E3  VISHAY

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 25V
FET Feature-
Power Dissipation (Max)7.5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63