TK6A60D  TOSHIBA

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CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleToshiba Semiconductor and Storage
Manufacturerπ-MOSVII
SeriesN-Channel
FET TypeMOSFET (Metal Oxide)
Technology600V
Drain to Source Voltage (Vdss)6A (Ta)
Current - Continuous Drain (Id) @ 25°C10V
Drive Voltage (Max Rds On, Min Rds On)1.25 Ohm @ 3A, 10V
Rds On (Max) @ Id, Vgs4V @ 1mA
Vgs(th) (Max) @ Id16nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±30V
Vgs (Max)800pF @ 25V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature40W (Tc)
Power Dissipation (Max)150°C (TJ)
Operating TemperatureThrough Hole
Mounting TypeTO-220SIS
Supplier Device PackageTO-220-3 Full Pack