TPC6109-H  TOSHIBA

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
Transistors - FETs, MOSFETs - SingleToshiba Semiconductor and Storage
ManufacturerU-MOSIII-H
SeriesP-Channel
FET TypeMOSFET (Metal Oxide)
Technology30V
Drain to Source Voltage (Vdss)5A (Ta)
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)59 mOhm @ 2.5A, 10V
Rds On (Max) @ Id, Vgs1.2V @ 200µA
Vgs(th) (Max) @ Id12.3nC @ 10V
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)490pF @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature700mW (Ta)
Power Dissipation (Max)150°C (TJ)
Operating TemperatureSurface Mount
Mounting TypeVS-6 (2.9x2.8)
Supplier Device PackageSOT-23-6 Thin, TSOT-23-6