TPC6109-H  TOSHIBA

Product AttributesDescription
CategoriesDiscrete Semiconductor Products , Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII-H
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs59 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVS-6 (2.9x2.8)
Package / CaseSOT-23-6 Thin, TSOT-23-6